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Abdul Majid, Jianjun Zhu, Najam al Hassan and Abdul Shakoor Structural modifications of GaN after cerium implantation Journal of Raman Spectroscopy 44

Version of Record online: 12 JUL 2012 | DOI: 10.1002/jrs.4143

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Ce : GaN is a least studied system. Ce ions were implanted into metalorganic chemical vapor deposition grown n- and p-GaN/sapphire thin films at doses 3 × 1014 and 2 × 1015 cm−2. X-ray diffraction scans, reciprocal space maps and Raman scattering measurements exhibited expansion of lattice in implanted portion of the samples. Ultraviolet Raman spectra of implanted samples show complete quenching of photoluminescence emission and appearance of multiple A1(LO) phonon scattering modes up to fifth order. This material is a potential candidate for applications in photonic and spintronic devices.

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