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N. Piluso, R. Anzalone, M. Camarda, A. Severino, A. La Magna, G. D'Arrigo and F. La Via Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures Journal of Raman Spectroscopy 44

Version of Record online: 1 SEP 2012 | DOI: 10.1002/jrs.4171

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Micro Raman spectroscopy and finite-element modeling (FEM) are used to determine the stress gradient acting on free standing microstructures. The anchorage points show an intense stress field described via an overlap of the diagonal and non-diagonal components of the Raman stress tensor. The results reveal an abrupt change of the Raman transverse optical mode (up to 2.5 cm−1) close to the anchorage point. FEM confirms such result highlighting the role of the shear component. The results lead to a complete determination of the local stress field in the epitaxial thin film released.

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