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M. Erich, S. Petrović, M. Kokkoris, E. Liarokapis, A. Antonakos and I. Telečki Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation Journal of Raman Spectroscopy 44

Version of Record online: 10 JAN 2013 | DOI: 10.1002/jrs.4211

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A novel method for obtaining silicon amorphization depth profile induced by implantation of 6-MeV Al2+ ions in silicon crystal using micro-Raman scanning measurement along transversal cross section of implanted region has been successfully implemented. The obtained silicon amorphization depth profiles were cross-checked by the scanning electron microscope image and the Rutherford backscattering method in the random and channeling orientation spectra.

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