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A. Sanson, M. Giarola, E. Napolitani, G. Impellizzeri, V. Privitera, A. Carnera and G. Mariotto Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths Journal of Raman Spectroscopy 44

Version of Record online: 14 MAR 2013 | DOI: 10.1002/jrs.4249

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The distribution profile of Al implanted in crystalline Ge has been investigated by micro-Raman spectroscopy under different excitation laser lines, corresponding to different optical penetration depths. A fast and non-destructive method, based on micro-Raman spectroscopy, is proposed to estimate the carrier profiles in Ge.

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