S. A. Dyakov, T. S. Perova, C. Q. Miao, Y.-H. Xie, S. A. Cherevkov and A. V. Baranov Influence of the buffer layer properties on the intensity of Raman scattering of graphene Journal of Raman Spectroscopy 44
In this paper, a simultaneous presentation of Raman intensity of the G-band and optical contrast maps for a single layer of graphene, as a function of refractive index and buffer layer thickness is produced. This presentation enables selection of the buffer layer material in order to optimize Raman and optical microscopy imaging. The advantages of this technique, demonstrated at an excitation wavelength of 457 nm, are confirmed experimentally for two dielectric materials viz. SiO2 and Al2O3 with different refractive indices and thicknesses.
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