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Kamel Rezgui, Riadh Othmen, Antonella Cavanna, Hosni Ajlani, Ali Madouri and Meherzi Oueslati The improvement of InAs/GaAs quantum dot properties capped by Graphene Journal of Raman Spectroscopy 44

Article first published online: 17 SEP 2013 | DOI: 10.1002/jrs.4382

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Graphene is the one-atom thin layer of sp2-bonded carbon atoms arranged in a honey-comb lattice. Controllable transfer technique of graphene on specific substrates such as semiconductors (Si, GaAs, InAs,…) or dielectrics (SiO2, Glass…) has been developed. Graphene was grown by chemical vapor deposition and successfully transferred on InAs/GaAs QDs which has been previously grown by molecular beam epitaxy on (001) GaAs substrate. The advantage of this method compared with mechanical exfoliation is that continuous films can be grown on the centimeter scale with domain size as high as 10 µm. It is reproducible, and the films can then be transferred to virtually any substrates.

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