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Hanju Jo, Jieun Ko, Jung Ah Lim, Hye Jung Chang and Youn Sang Kim Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure Macromolecular Rapid Communications 34

Version of Record online: 27 DEC 2012 | DOI: 10.1002/marc.201200614

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Flexible nonvolatile resistive memory devices using self-assembled block copolymer/PCBM nanocomposites are introduced. The spherical phase of PS10-b-PMMA130 finely controls the segregation of PCBM and improves the performance of memory devices. The memory devices show bipolar characteristics with stable and reproducible performance.

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