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J. H. Shi, Z. Q. Li, D. W. Zhang, Q. Q. Liu, Z Sun and S. M. Huang Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target Progress in Photovoltaics: Research and Applications 19

Version of Record online: 25 MAY 2010 | DOI: 10.1002/pip.1001

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We report deposition of Cu-In-Ga-Se precursors by one-step sputtering of a single quaternary Cu(In,Ga)Se2 (CIGS) chalcogenide target at room temperature, followed by post selenization using Se pellets. The precursor films exhibit a chalcopyrite structure with a preferential orientation in the (112) direction. A solar cell with an efficiency of 7.95% has been fabricated using the post-selenized CIGS film, and an alternative, large scale and controlled process to fabricate CIGS absorber layers with quite good photovoltaic performance has been demonstrated.

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