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Markus Rinio, Arthit Yodyunyong, Sinje Keipert-Colberg, Yves Patrick Botchak Mouafi, Dietmar Borchert and Amada Montesdeoca-Santana Improvement of multicrystalline silicon solar cells by a low temperature anneal after emitter diffusion Progress in Photovoltaics: Research and Applications 19

Version of Record online: 14 JUL 2010 | DOI: 10.1002/pip.1002

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An annealing step of 500 - 600 °C for about 1 – 2 hours after phosphorus diffusion improves the border areas of multicrystalline silicon solar cells that were deteriorated from the crucible. Light beam induced current topograms indicate that the effect can be explained by phosphorus gettering. An efficiency increase from 14.5 % to 15.4 % by a 2 hour anneal at 500 °C was observed.

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