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Chun Gong, Sukhvinder Singh, Jo Robbelein, Niels Posthuma, Emmanuel Van Kerschaver, Jef Poortmans and Robert Mertens High efficient n-type back-junction back-contact silicon solar cells with screen-printed Al-alloyed emitter and effective emitter passivation study Progress in Photovoltaics: Research and Applications 19

Article first published online: 3 SEP 2010 | DOI: 10.1002/pip.1035

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We demonstrate the use of industrial-orientated screen-printed aluminum-alloyed p+ emitter for high-efficiency n-type back-junction back-contact silicon solar cells. Different cell designs with various pitch sizes and emitter fractions have been studied. With an improved front surface field, short-circuit current densities up to 40mA/cm2 can be obtained. By combining the best cell design and the improved FSF, a high conversion efficiency of 19.1% with Czochralski n-type material has been achieved. Moreover, better quality emitter and emitter passivation has been developed.

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