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Gavin Conibeer, Martin A. Green, Dirk König, Ivan Perez-Wurfl, Shujuan Huang, Xiaojing Hao, Dawei Di, Lei Shi, Santosh Shrestha, Binesh Puthen-Veetil, Yong So, Bo Zhang and Zhenyu Wan Silicon quantum dot based solar cells: addressing the issues of doping, voltage and current transport Progress in Photovoltaics: Research and Applications 19

Version of Record online: 10 NOV 2010 | DOI: 10.1002/pip.1045

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Quantum confinement in Silicon quantum dots can be used to engineer optimal effective band gaps for tandem cells which can be grown using thin film vapour phase processes such as sputtering or PECVD. However, very large resistances due to low tunnelling probabilities between quantum dots and an incomplete understanding of doping in these materials need to be addressed to improve device performance. Progress on reducing series resistance using nitride interlayers and a new model for ‘modified modulation’ doping are presented.

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