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Chie-Sheng Liu, Chia-Yin Wu, Ian-Wei Chen, Hseuh-Chuan Lee and Lu-Sheng Hong High-rate deposition of a-Si:H thin layers for high-performance silicon heterojunction solar cells Progress in Photovoltaics: Research and Applications 21

Version of Record online: 17 OCT 2011 | DOI: 10.1002/pip.1189

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Epitaxial growth of a-Si:H layers occurs on crystalline silicon surfaces at a low substrate temperature (90 °C) when the deposition rate is low (0·5 Å/s); in contrast, amorphous structures remain at temperatures as high as 150 °C when deposition is performed at a high rate of 4·2 Å/s. Using this knowledge, a very low surface recombination velocity (7·6 cm/s) was achieved for an a-Si:H passivated crystalline silicon wafer.

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