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Takahiro Mise and Tokio Nakada Narrow-bandgap CuIn3Te5 thin-film solar cells Progress in Photovoltaics: Research and Applications 21

Article first published online: 24 OCT 2011 | DOI: 10.1002/pip.1191

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We propose CuIn3Te5 as a ternary semiconductor material for narrow-bandgap thin-film solar cells. Well-developed CuIn3Te5 grains were obtained at a substrate temperature of 250 °C. The best solar cell that was fabricated using 4·0-µm-thick CuIn3Te5 layers grown at 250 °C yielded a total area efficiency of 6·92% (Voc = 407 mV, Jsc = 33·1 mA/cm2, and FF = 0·514). A band diagram of the ZnO/CdS/CuIn3Te5 solar cell was also presented.

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