Ahmed A. Abouelsaood, Moustafa Y. Ghannam and Jef Poortmans On the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells Progress in Photovoltaics: Research and Applications 21
A careful re-examination of the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells shows that a separation of the quasi-Fermi levels of the intermediate and the conduction bands is not consistent with the experimental results of the quantum efficiency and the luminescence intensity of the InAs/GaAs cells, which rather indicate that the temperature of the optically active regions of the cell during the electroluminescence measurements is about 525 K.
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