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Weiguo Hu, Yukihiro Harada, Aiko Hasegawa, Tomoya Inoue, Osamu Kojima and Takashi Kita Intermediate band photovoltaics based on interband–intraband transitions using In0.53Ga0.47As/InP superlattice Progress in Photovoltaics: Research and Applications 21

Version of Record online: 25 NOV 2011 | DOI: 10.1002/pip.1208

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We present a theoretical model to study intermediate band (IB) photovoltaics (PV) mechanism, which incorporates a quantum interband–intraband transition into the macroscopic drift–diffusion, potential distribution and detailed balance process. Our analysis reveals that superlattice (SL) structures can be a potential candidate for the next-generation ultra high-efficiency PV. Both the IB configuration and interband–intraband transition are determined by the SL structure, and an efficiency contour plot has been calculated to guide quantum design of In0.53Ga0.47As/InP SLs.

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