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Wolfram Kwapil, Jan Nievendick, Annika Zuschlag, Paul Gundel, Martin C. Schubert and Wilhelm Warta Influence of surface texture on the defect-induced breakdown behavior of multicrystalline silicon solar cells Progress in Photovoltaics: Research and Applications 21

Version of Record online: 18 JAN 2012 | DOI: 10.1002/pip.1226

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We show that the defect-induced diode breakdown at recombination active defects of multicrystalline silicon solar cells strongly depends on the etch pit depth, the etch pits resulting from selective etching of crystallographic defects during the surface texturization. The deeper the etch pits are, the lower is the local defect-induced breakdown voltage and the steeper is the increase of the reverse current locally flowing through defect-induced breakdown regions with increasing reverse bias.

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