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Dawei Di, Heli Xu, Ivan Perez-Wurfl, Martin A. Green and Gavin Conibeer Improved nanocrystal formation, quantum confinement and carrier transport properties of doped Si quantum dot superlattices for third generation photovoltaics Progress in Photovoltaics: Research and Applications 21

Version of Record online: 16 NOV 2011 | DOI: 10.1002/pip.1230

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‘Doped Si quantum dots in SiO2/Si3N4 hybrid matrix’ is a novel nanostructured material designed for the application of third generation photovoltaic cells. This material manages to constrain the growth of doped Si quantum dots effectively and enhances the apparent band gap. Electrical characterisation on Si QD/c-Si heterointerface test structures indicates the new material possesses improved carrier transport properties.

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