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Masaki Takihara, Takashi Minemoto, Youichi Wakisaka and Takuji Takahashi An investigation of band profile around the grain boundary of Cu(InGa)Se2 solar cell material by scanning probe microscopy Progress in Photovoltaics: Research and Applications 21

Version of Record online: 16 NOV 2011 | DOI: 10.1002/pip.1235

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The band profile around the grain boundaries (GBs) in Cu(InGa)Se2 was estimated from scanning tunneling spectroscopy and photo-assisted Kelvin probe force microscopy. The results indicate both downward bending of the conduction band edge and broadening of the band gap near GBs, and consequently we can conclude that photo-generated electrons and holes are easily separated by the built-in field near GBs and that their recombination at the GBs should be suppressed.

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