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Helmut Mäckel and Kenneth Varner On the determination of the emitter saturation current density from lifetime measurements of silicon devices Progress in Photovoltaics: Research and Applications 21

Version of Record online: 17 FEB 2012 | DOI: 10.1002/pip.2167

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We review the physics behind the analysis of the emitter saturation current density (Joe) and compare the commonly used approximations with more generalised solutions using two-dimensional device simulations. We show that the approximations used for the determination of Joe from photoconductance measurements make Joe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high-quality silicon, Joe should be determined from the analytical solution as a function of excess minority carrier density including Shockley-Read-Hall recombination.

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