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Victor Prajapati, Tom Janssens, Joachim John, Jef Poortmans and Robert Mertens Diffusion-free high efficiency silicon solar cells Progress in Photovoltaics: Research and Applications 21

Article first published online: 2 APR 2012 | DOI: 10.1002/pip.2189

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This work presents a novel approach in utilizing implantation for silicon solar cells. First, phosphorus is implanted into textured silicon, then SiNxHy is deposited along with rear side passivation layers, then dopant activation is done using a metal-contaminated firing furnace. Cell results on 160-µm thick, 148.25-cm2 Cz Si wafers with the use of the proposed traditional diffusion-free process flow are up to 18.8% with a Voc of 638 mV, Jsc of 38.5 mA/cm2, and a fill factor of 76.6%.

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