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Christian Reichel, Filip Granek, Martin Hermle and Stefan W. Glunz Back-contacted back-junction n-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry Progress in Photovoltaics: Research and Applications 21

Article first published online: 27 MAR 2012 | DOI: 10.1002/pip.2204

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In this study, back-contacted back-junction n-type silicon solar cells featuring a large emitter coverage (point-like base contacts), a small emitter coverage (point-like base and emitter contacts), and interdigitated metal fingers have been fabricated. To prevent shunting, an insulating thin film is applied on the rear side. Hence, the charge carrier collection and the metallization geometry can be decoupled leading to a significant reduction of electrical shading losses and excellent short-circuit current densities of more than 41 mA/cm2 and conversion efficiencies of up to 23.0%.

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