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I. Martín, P. Ortega, M. Colina, A. Orpella, G. López and R. Alcubilla Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells Progress in Photovoltaics: Research and Applications 21

Version of Record online: 26 APR 2012 | DOI: 10.1002/pip.2207

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We explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, part of the aluminium in the Al2O3 film is introduced into the c-Si, creating p+ regions that allow ohmic contacts with low-surface recombination velocities.

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