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Chiara Modanese, Maurizio Acciarri, Simona Binetti, Anne-Karin Søiland, Marisa Di Sabatino and Lars Arnberg Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon Progress in Photovoltaics: Research and Applications 21

Version of Record online: 24 MAY 2012 | DOI: 10.1002/pip.2223

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Hall-effect measurements were carried out on compensated mc-Si samples, at temperatures between 70 K and 373 K. At low temperature, the samples scales with compensation ratio and show a decrease in majority carrier mobility compared to uncompensated references, due to increased ionized impurity scattering. At high temperatures, the compensated samples approach the uncompensated references, due to the dominant lattice scattering mechanism.

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