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J. Lindahl, J. T. Wätjen, A. Hultqvist, T. Ericson, M. Edoff and T. Törndahl The effect of Zn1−xSnxOy buffer layer thickness in 18.0% efficient Cd-free Cu(In,Ga)Se2 solar cells Progress in Photovoltaics: Research and Applications 21

Version of Record online: 10 JUL 2012 | DOI: 10.1002/pip.2239

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The influence of the thickness of atomic layer deposited Zn1-xSnxOy buffer layers and the presence of an intrinsic ZnO layer on the performance of Cu(In,Ga)Se2 solar cells are investigated. Both the open circuit voltage and the fill factor values are found to be thickness dependent, where a highest conversion efficiency of 18.0 % is obtained for a cell with a Zn1-xSnxOy layer thickness of approximately 13 nm.

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