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Xinbo Yang, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi and S. Uda Crystal growth and equilibrium crystal shapes of silicon in the melt Progress in Photovoltaics: Research and Applications 22

Version of Record online: 26 SEP 2012 | DOI: 10.1002/pip.2290

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The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon ECSs in the melt are obtained by the relaxation from the CGSs, exhibit the {111} facets separated by curved interface.

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