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Dong Hyeop Shin, Ji Hye Kim, Young Min Shin, Kyung Hoon Yoon, Essam A. Al-Ammar and Byung Tae Ahn Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film Progress in Photovoltaics: Research and Applications 21

Version of Record online: 6 DEC 2012 | DOI: 10.1002/pip.2319

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To protect the ZnS/CIGS interface during a sputtering process, a bilayer ZnO : Al film was developed. The introduction of a 50-nm-thick ZnO : Al layer deposited at 50 W prevented sputtering damage. The ZnS/Cu(In,Ga)Se2 solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68 %. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for Cu(In,Ga)Se2 solar cells with a ZnS buffer layer.

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