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Shubham Duttagupta, Fen Lin, Marshall Wilson, Matthew B. Boreland, Bram Hoex and Armin G. Aberle Extremely low surface recombination velocities on low-resistivity n-type and p-type crystalline silicon using dynamically deposited remote plasma silicon nitride films Progress in Photovoltaics: Research and Applications 22

Version of Record online: 17 DEC 2012 | DOI: 10.1002/pip.2320

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Extremely low Seff.max of 5.6 and 7.4 cm/s, respectively, are obtained on ~1.5 Ω cm n and p-type silicon wafers, using dynamically-deposited plasma silicon nitride (SiNx) films. Such low Seff.max values were previously only attainable for SiNx films deposited statically in laboratory reactors or after optimised annealing; however, in our case the SiNx films were dynamically deposited onto large-area c-Si wafers using a fully industrial reactor and provide excellent surface passivation results both in the as-deposited condition and after industrial-firing, which is a widely used process in the photovoltaic industry.

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