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Vikash Ranjan, Thomas Begou, Scott Little, Robert W. Collins and Sylvain Marsillac Non-destructive optical analysis of band gap profile, crystalline phase, and grain size for Cu(In,Ga)Se2 solar cells deposited by 1-stage, 2-stage, and 3-stage co-evaporation Progress in Photovoltaics: Research and Applications 22

Version of Record online: 4 FEB 2013 | DOI: 10.1002/pip.2350

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Cu(In,Ga)Se2 thin films co-evaporated by 1-stage, 2-stage, and 3-stage processes have been studied by spectroscopic ellipsometry (SE). The disappearance of a Cu2-xSe optical signature, detected by real time SE during multistage CIGS, has enabled precise endpoint control. Band gap energies determined by SE as depth averages show little variation with process, whereas broadening parameters decrease with increasing number of stages. Refined SE analysis has revealed band gap profiling only for 3-stage CIGS. These results were correlated with solar cells parameters.

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