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Se Jin Park, Jin Woo Cho, Joong Kee Lee, Keeshik Shin, Ji-Hyun Kim and Byoung Koun Min Solution processed high band-gap CuInGaS2 thin film for solar cell applications Progress in Photovoltaics: Research and Applications 22

Article first published online: 11 JAN 2013 | DOI: 10.1002/pip.2354

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A high band-gap (~1.55 eV) CuInGaS2 film is synthesized by a precursor solution-based coating method with an oxidation and a sulfurization. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film shows a relatively high open circuit voltage (787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.

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