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Dirk König, Daniel Hiller, Margit Zacharias, Stephan Michard and Christopher Flynn Static hot carrier populations as a function of optical excitation energy detected through energy selective contacts by optically assisted IV Progress in Photovoltaics: Research and Applications 22

Version of Record online: 6 FEB 2013 | DOI: 10.1002/pip.2367

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Steady-state carrier populations at the interface of an n-Si wafer to an Si quantum dot array embedded in SiO2 were characterized by optically assisted IV with photon energies from 1.24 to 2.48 eV (1000 to 500 nm). At 80 K, hot carrier populations in Si exist within the range of the ballistic mean free path from the quantum dot array, with a clear correlation between the average hot hole temperature and the photon energy. We deliver proof of principle for an energy selective contact at room temperature and a hot carrier solar cell with one energy selective contact at 80 K.

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