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Charles J. Hages, Sergej Levcenco, Caleb K. Miskin, Jan H. Alsmeier, Daniel Abou-Ras, Regan G. Wilks, Marcus Bär, Thomas Unold and Rakesh Agrawal Improved performance of Ge-alloyed CZTGeSSe thin-film solar cells through control of elemental losses Progress in Photovoltaics: Research and Applications 23

Version of Record online: 4 DEC 2013 | DOI: 10.1002/pip.2442

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Improved performance of nanocrystal ink-based CZTGeSSe solar cells has been achieved through minimization of bulk Ge loss from the absorber film during selenization. Here, total area power conversion efficiencies of 9.4% are reported for CZTGeSSe with 30 at.% Ge incorporation compared with 8.4% for CZTSSe. Despite elemental losses measured at the absorber film surface, improved performance of CZTGeSSe over CZTSSe is chiefly attributed to increased charge carrier lifetimes as well as reduced voltage-dependent charge carrier collection upon Ge alloying.

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