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H.C. Kim and V.M. Fthenakis Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules Progress in Photovoltaics: Research and Applications 19

Version of Record online: 14 JUL 2010 | DOI: 10.1002/pip.990

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The energy payback time (EPBT) of amorphous amorphous silicon (a-Si) PV designs with nano crystalline silicon (nc-Si) bottom layer has been investigated in a prospective lifecycle analysis framework. Assuming an 8% conversion efficiency, the EPBT of those designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si designs. Expected improvements in the nc-Si film deposition rate and conversion efficiency could lower EPBT by 30%.

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