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D. Zhu, C. McAleese, M. Häberlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke, M. Couillard, G. A. Botton, S.-L. Sahonta and C. J. Humphreys High-efficiency InGaN/GaN quantum well structures on large area silicon substrates physica status solidi (a) 209

Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssa.201100129

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