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Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda and Hiroshi Amano Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers physica status solidi (a) 209

Article first published online: 15 FEB 2012 | DOI: 10.1002/pssa.201100379

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