E-mail

E-mail a Wiley Online Library Link

Yongshun Wang Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide physica status solidi (a) 209

Version of Record online: 8 NOV 2011 | DOI: 10.1002/pssa.201127391

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH