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T. Rana, M. V. S. Chandrashekhar and T. S. Sudarshan Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy physica status solidi (a) 209

Version of Record online: 7 SEP 2012 | DOI: 10.1002/pssa.201228319

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