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T. Rana, M. V. S. Chandrashekhar and T. S. Sudarshan Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy physica status solidi (a) 209

Article first published online: 7 SEP 2012 | DOI: 10.1002/pssa.201228319

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