M. Benyoucef, M. Usman, T. Alzoubi and J. P. Reithmaier Pre-patterned silicon substrates for the growth of III–V nanostructures physica status solidi (a) 209
For III-V/Si hybrid integration, direct epitaxial growth of III–V compounds on silicon substrates would be the most desirable approach, because only silicon processing is required. However, heteroepitaxial growth typically introduces defects. Growth on pre-patterned substrates could result in reducing or eliminating such defects due to size effect and effective lateral stress relaxation related to the presence of nanohole facet edges. In this Feature Article, Benyoucef and coworkers review the recent progress on site-controlled growth of III–V material on pre-patterned silicon substrates. In addition, they discuss an optimized growth process towards the full control of III–V nucleation in pre-patterned nanoholes.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf