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Christian Schneider, Alexander Huggenberger, Manuel Gschrey, Peter Gold, Sven Rodt, Alfred Forchel, Stephan Reitzenstein, Sven Höfling and Martin Kamp In(Ga)As/GaAs site-controlled quantum dots with tailored morphology and high optical quality physica status solidi (a) 209

Article first published online: 17 SEP 2012 | DOI: 10.1002/pssa.201228373

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One of the most important challenges in seeking for scalable approaches for quantum information architectures based on optically active single quantum dots (QDs) in semiconductors is gaining control over the emitter's position. One concept to achieve well-ordered arrays of In(Ga)As quantum dots fabricated on the most commonly used (001) oriented GaAs substrate is based on principles of directed nucleation on nanoholes, and it is approaching now a high level of maturity. In this Feature Article, the authors discuss and review growth and fabrication strategies allowing for the realization of perfectly ordered In(Ga)As QD arrays, comprising optical properties comparable to their self-assembled counterparts.

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