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Matthew J. Hollander, Ashish Agrawal, Michael S. Bresnehan, Michael LaBella, Kathleen A. Trumbull, Randal Cavalero, David W. Snyder, Suman Datta and Joshua A. Robinson Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties physica status solidi (a) 210

Version of Record online: 22 APR 2013 | DOI: 10.1002/pssa.201228683

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The effects of hexagonal boron nitride on electrical transport properties of bilayer quasi-free-standing epitaxial graphene are investigated and compared to the high-k dielectric HfO2. Modeling is used to explain the effect of substrate step-edge density and charged impurities introduced by the dielectric overlayers on transport properties, showing that reducing step-edges and use of boron nitride can lead to >5 × increase in mobility.

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