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Kenjiro Fukuda, Tatsuya Suzuki, Takuma Kobayashi, Daisuke Kumaki and Shizuo Tokito Suppression of threshold voltage shifts in organic thin-film transistors with bilayer gate dielectrics physica status solidi (a) 210

Version of Record online: 25 FEB 2013 | DOI: 10.1002/pssa.201228811

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In this study, bias stress effects are investigated in organic thin-film transistor devices with bilayer gate dielectric constructions consisting of two layers possessing opposite bias stress tendencies. These bias stress effects closely correlate with the thickness ratio of the two dielectric layers, such that threshold voltage shifts can be described as a linear function for the capacitive ratio of the two dielectric layers. A new method for almost completely suppressing the bias stress effects and providing long-term operational stability in organic thin-film transistors is also provided.

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