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J. Mickevičius, D. Dobrovolskas, I. Šimonytė, G. Tamulaitis, C.-Y. Chen, C.-H. Liao, H.-S. Chen and C. C. Yang Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures physica status solidi (a) 210

Article first published online: 30 APR 2013 | DOI: 10.1002/pssa.201228824

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