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Masashi Kato, Atsushi Yoshida, Masaya Ichimura and Hiroyuki Nagasawa Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate physica status solidi (a) 210

Article first published online: 14 JUN 2013 | DOI: 10.1002/pssa.201329015

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