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Rui Li, Yifan Jiang, Ling Xu, Zhongyuan Ma, Fei Yang, Jun Xu and Weining Su Enhanced threshold voltage of Zn-doped Ge2Sb2Te5 phase-change memory deposited by electron-beam evaporation physica status solidi (a) 210

Version of Record online: 24 SEP 2013 | DOI: 10.1002/pssa.201329381

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