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O. A. Mironov, A. H. A. Hassan, M. Uhlarz, S. Kiatgamolchai, A. Dobbie, R. J. H. Morris, J. E. Halpin, S. D. Rhead, P. Allred, M. Myronov, S. Gabani, I. B. Berkutov and D. R. Leadley New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology physica status solidi (c) 11

Version of Record online: 9 DEC 2013 | DOI: 10.1002/pssc.201300164

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