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Kuyyadi P. Biju, Xinjun Liu, Seonghyun Kim, Seungjae Jung, Jubong Park and Hyunsang Hwang Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films physica status solidi (RRL) - Rapid Research Letters 5

Article first published online: 19 JAN 2011 | DOI: 10.1002/pssr.201004455

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This Letter reports the coexistence of a filamentary and a homogeneous type of resistive switching in Pt/graded WOx/W devices. Two stable switching modes with opposite switching polarity and different electrical characteristics and memory performance are found to coexist in the same memory cell. Reversible effects between the two modes hint towards a possible modulation of the switching type in Pt/WOx/W devices.

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