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Yong Tae Kim, Eun Tae Kim, Chung Soo Kim and Jeong Yong Lee Phase transformation mechanism of In–Sb–Te through the boundary reaction between InSb and InTe physica status solidi (RRL) - Rapid Research Letters 5

Article first published online: 19 JAN 2011 | DOI: 10.1002/pssr.201004515

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In this Letter, the authors report phase transformation mechanism of In–Sb–Te chalcogenide material for the multi-level phase change memory. At the crystallization temperature, the In3Sb1Te2 phase is formed at the coherent boundary with the InTe side first and grown into the InSb side gradually. This result is explained by the atomic rearrangement model where the small lattice distortion allows the formation of In3Sb1Te2 phase at the strained boundary region.

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