Masataka Imura, Ryoma Hayakawa, Eiichiro Watanabe, Meiyong Liao, Yasuo Koide and Hiroshi Amano Demonstration of diamond field effect transistors by AlN/diamond heterostructure physica status solidi (RRL) - Rapid Research Letters 5
This Letter reports on the first demonstration of a diamond field effect transistor (FET) using an AlN and diamond heterojunction structure. The FET behaves as a p-channel FET with a normally on depletion mode. The transistor properties of the current device indicate that the FET may progress to a thermally stable, high-frequency, and high-power switching device.
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