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Masataka Imura, Ryoma Hayakawa, Eiichiro Watanabe, Meiyong Liao, Yasuo Koide and Hiroshi Amano Demonstration of diamond field effect transistors by AlN/diamond heterostructure physica status solidi (RRL) - Rapid Research Letters 5

Article first published online: 15 FEB 2011 | DOI: 10.1002/pssr.201105024

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This Letter reports on the first demonstration of a diamond field effect transistor (FET) using an AlN and diamond heterojunction structure. The FET behaves as a p-channel FET with a normally on depletion mode. The transistor properties of the current device indicate that the FET may progress to a thermally stable, high-frequency, and high-power switching device.

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