J. Chen, E. Cornagliotti, E. Simoen, E. Hieckmann, J. Weber and J. Poortmans A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon physica status solidi (RRL) - Rapid Research Letters 5
The deep level transient spectroscopy (DLTS) technique was used to detect interface states at grain boundaries in multicrystalline silicon (mc-Si), especially on Σ3 and Σ9 grain boundaries (GBs) under as-grown conditions and after hydrogenation or gettering. Interface states are found to be comparable for both GBs in the as-grown state. Either gettering or hydrogenation reduces the recombination activity of both GBs, and the reduction for Σ3 GBs is stronger than for Σ9 GBs especially after hydrogenation.
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