Prasanna Sivasubramani, Tae Joo Park, Brian E. Coss, Antonio Lucero, Jie Huang, Barry Brennan, Yu Cao, Debdeep Jena, Huili (Grace) Xing, Robert M. Wallace and Jiyoung Kim In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates physica status solidi (RRL) - Rapid Research Letters 6
Article first published online: 2 NOV 2011 | DOI: 10.1002/pssr.201105417
In this Letter an in-situ X-ray photoelectron spectroscopy study of half-cycle treatments of a trimethyl aluminum/water atomic layer deposition (ALD) process on both HF-cleaned and O3 oxidized GaN surfaces is reported. No significant re-growth of Ga–O–N or self-cleaning of surface oxide during ALD is indicated unlike on GaAs or InGaAs substrates.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf
Required = Required Field
Choose captcha format: Image or Audio. Click here if you need help.